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Modulation Effects of AlN buffer layers on the structural and optical properties ofGaN epilayers grown on Al2O3 substrates by plasma-assisted molecular-beam epitaxy

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dc.contributor.author전희창-
dc.date.accessioned2024-10-30T09:42:30Z-
dc.date.available2024-10-30T09:42:30Z-
dc.date.issued2011-07-25-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/45067-
dc.titleModulation Effects of AlN buffer layers on the structural and optical properties ofGaN epilayers grown on Al2O3 substrates by plasma-assisted molecular-beam epitaxy-
dc.typeConference-
dc.citation.startPage25-
dc.citation.endPage26-
dc.citation.conferenceName15th conference on Modulated Semiconductor Structures-
dc.citation.conferencePlace미국-
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