Transport properties for Si nanowire-channel MOSFETs formed with electron-beam-lithographically patterned ultra-narrow &lt;100&gt; and &lt;110&gt; Si wires

김득영

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Transport properties for Si nanowire-channel MOSFETs formed with electron-beam-lithographically patterned ultra-narrow <100> and <110> Si wires

Authors: 김득영

Issue Date: 6-Apr-2010

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/43233

Place: 미국
모스콘 컨벤션센터

Conference Date: 2010-04-05 ~ 2010-04-09

Conference Name: 2010 Spring meeting on Material research society

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Appears in Collections: College of Natural Science > Division of Physics & Semiconductor Science > 2. Conference Papers

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