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Transport properties for Si nanowire-channel MOSFETs formed with electron-beam-lithographically patterned ultra-narrow <100> and <110> Si wires
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김득영 | - |
| dc.date.accessioned | 2024-10-30T07:42:07Z | - |
| dc.date.available | 2024-10-30T07:42:07Z | - |
| dc.date.issued | 2010-04-06 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/43233 | - |
| dc.title | Transport properties for Si nanowire-channel MOSFETs formed with electron-beam-lithographically patterned ultra-narrow <100> and <110> Si wires | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2010 Spring meeting on Material research society | - |
| dc.citation.conferencePlace | 미국 | - |
| dc.citation.conferencePlace | 모스콘 컨벤션센터 | - |
| dc.citation.conferenceDate | 2010-04-05 ~ 2010-04-09 | - |
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