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Fmax=433GHz from 0.1um Gamma Gate InGaAs/InAlAs/GaAs Metamorphic HEMTs
- Authors
- 이진구
- Issue Date
- 6-Oct-2003
- Place
- 독일
Munich
- Conference Date
- 2003-10-06 ~ 2003-10-08
- Conference Name
- European Gallium Arsenide & other Compound Semiconductors Application Symposium
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Collections - ETC > 2. Conference Papers
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