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Fmax=433GHz from 0.1um Gamma Gate InGaAs/InAlAs/GaAs Metamorphic HEMTs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이진구 | - |
| dc.date.accessioned | 2024-10-30T01:44:28Z | - |
| dc.date.available | 2024-10-30T01:44:28Z | - |
| dc.date.issued | 2003-10-06 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/33718 | - |
| dc.title | Fmax=433GHz from 0.1um Gamma Gate InGaAs/InAlAs/GaAs Metamorphic HEMTs | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | European Gallium Arsenide & other Compound Semiconductors Application Symposium | - |
| dc.citation.conferencePlace | 독일 | - |
| dc.citation.conferencePlace | Munich | - |
| dc.citation.conferenceDate | 2003-10-06 ~ 2003-10-08 | - |
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