Influence of Gate Recess Structure on the DC Characteristics of 0.1 um Metamorphic HEMTs

김삼동

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Influence of Gate Recess Structure on the DC Characteristics of 0.1 um Metamorphic HEMTs

Authors: 김삼동

Issue Date: 7-May-2006

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/29576

Place: 미국
Denver, Colorado

Conference Date: 2006-05-07 ~ 2006-05-11

Conference Name: 209th ECS Meeting

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Appears in Collections: College of Engineering > Department of Electronics and Electrical Engineering > 2. Conference Papers

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