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Influence of Gate Recess Structure on the DC Characteristics of 0.1 um Metamorphic HEMTs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김삼동 | - |
| dc.date.accessioned | 2024-10-30T01:25:24Z | - |
| dc.date.available | 2024-10-30T01:25:24Z | - |
| dc.date.issued | 2006-05-07 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/29576 | - |
| dc.title | Influence of Gate Recess Structure on the DC Characteristics of 0.1 um Metamorphic HEMTs | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 209th ECS Meeting | - |
| dc.citation.conferencePlace | 미국 | - |
| dc.citation.conferencePlace | Denver, Colorado | - |
| dc.citation.conferenceDate | 2006-05-07 ~ 2006-05-11 | - |
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