Switching from classical to ballistic transport in a 100nm Gamma gate AlGaAs/InGaAs pHEMT under lowered temperatures

임현식

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Switching from classical to ballistic transport in a 100nm Gamma gate AlGaAs/InGaAs pHEMT under lowered temperatures

Authors: 임현식

Issue Date: 24-Jul-2006

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/28784

Place: 오스트리아
비엔나

Conference Date: 2006-07-24 ~ 2006-07-28

Conference Name: 28th International conference on the physics of semiconductors

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Appears in Collections: College of Advanced Convergence Engineering > ETC > 2. Conference Papers

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