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Switching from classical to ballistic transport in a 100nm Gamma gate AlGaAs/InGaAs pHEMT under lowered temperatures
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 임현식 | - |
| dc.date.accessioned | 2024-10-30T01:20:37Z | - |
| dc.date.available | 2024-10-30T01:20:37Z | - |
| dc.date.issued | 2006-07-24 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/28784 | - |
| dc.title | Switching from classical to ballistic transport in a 100nm Gamma gate AlGaAs/InGaAs pHEMT under lowered temperatures | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 28th International conference on the physics of semiconductors | - |
| dc.citation.conferencePlace | 오스트리아 | - |
| dc.citation.conferencePlace | 비엔나 | - |
| dc.citation.conferenceDate | 2006-07-24 ~ 2006-07-28 | - |
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