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Atomic Layer Deposited SiOx-Based Resistive Switching Memory for Multi-Level Cell Storageopen access
- Authors
- Lee, Yewon; Shin, Jiwoong; Nam, Giyeong; Chung, Daewon; Kim, Sungjoon; Jeon, Joonhyeon; Kim, Sungjun
- Issue Date
- Aug-2022
- Publisher
- MDPI
- Keywords
- memristor; resistive switching; synaptic devices; silicon oxide
- Citation
- Metals, v.12, no.8, pp 1 - 6
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Metals
- Volume
- 12
- Number
- 8
- Start Page
- 1
- End Page
- 6
- ISSN
- 2075-4701
- Abstract
- Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiOX-based resistive memory device. The thickness and chemical properties of the Pt/SiOX/TaN stack are verified by transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). It is demonstrated that much better resistive switching is obtained using a negative set and positive reset compared to the opposite polarity. In addition, multi-level switching is demonstrated by changing the compliance current (CC) and the reset stop voltage, and potentiation and depression are emulated by applying pulses to achieve a synaptic device. Finally, a pulse endurance of 10,000 cycles and a retention time of 5000 s are confirmed by modulating the pulse input and reading voltage, respectively.
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Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)