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Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure
- Issue Date
- Jul-2017
- Publisher
- SPRINGER
- Keywords
- Quantum wells; ferromagnetism; clusters; molecular beam epitaxy
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.46, no.7, pp 3917 - 3921
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 46
- Number
- 7
- Start Page
- 3917
- End Page
- 3921
- ISSN
- 0361-5235
1543-186X
- Abstract
- The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.
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Related Researcher
- Yang, Woo Chul
- College of Natural Science (Department of Physics)