Cited 1 time in
Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kwon, Young H. | - |
| dc.contributor.author | Lee, Sejoon | - |
| dc.contributor.author | Yang, Woochul | - |
| dc.contributor.author | Park, Chang-Soo | - |
| dc.contributor.author | Yoon, Im Taek | - |
| dc.date.accessioned | 2024-09-26T14:31:07Z | - |
| dc.date.available | 2024-09-26T14:31:07Z | - |
| dc.date.issued | 2017-07 | - |
| dc.identifier.issn | 0361-5235 | - |
| dc.identifier.issn | 1543-186X | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/25491 | - |
| dc.description.abstract | The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | SPRINGER | - |
| dc.title | Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1007/s11664-016-5036-x | - |
| dc.identifier.scopusid | 2-s2.0-84992146016 | - |
| dc.identifier.wosid | 000403016800017 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.46, no.7, pp 3917 - 3921 | - |
| dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
| dc.citation.volume | 46 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 3917 | - |
| dc.citation.endPage | 3921 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | MAGNETOTRANSPORT PROPERTIES | - |
| dc.subject.keywordPlus | MAGNETIC-PROPERTIES | - |
| dc.subject.keywordPlus | CURIE-TEMPERATURE | - |
| dc.subject.keywordPlus | TRANSPORT | - |
| dc.subject.keywordAuthor | Quantum wells | - |
| dc.subject.keywordAuthor | ferromagnetism | - |
| dc.subject.keywordAuthor | clusters | - |
| dc.subject.keywordAuthor | molecular beam epitaxy | - |
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