Detailed Information
Cited 36 time in 
Cited 40 time in 
Cited 40 time in
Metadata Downloads
Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors Under Bias Stress With Light Illumination
- Authors
- Park, Kyung; Park, Hyun-Woo; Shin, Hyun Soo; Bae, Jonguk; Park, Kwon-Shik; Kang, Inbyeong; Chung, Kwun-Bum; Kwon, Jang-Yeon
- Issue Date
- Sep-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Crystallization; electronic structure; indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs); oxide semiconductor; reliability
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.9, pp 2900 - 2905
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 62
- Number
- 9
- Start Page
- 2900
- End Page
- 2905
- ISSN
- 0018-9383
1557-9646
- Abstract
- We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 degrees C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Science > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)