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Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures
- Authors
- Yuldashev, Shavkat U.; Yalishev, Vadim Sh.; Yunusov, Ziyodbek A.; Lee, Seung Joo; Jeon, Hee Chang; Kwon, Young Hae; Lee, Geun Tak; Park, Cheol Min; Kang, Tae Won
- Issue Date
- Sep-2015
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Diluted magnetic semiconductor; Ferroelectric gate; Magnetoelectric effect
- Citation
- CURRENT APPLIED PHYSICS, v.15, pp S22 - S25
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 15
- Start Page
- S22
- End Page
- S25
- ISSN
- 1567-1739
1878-1675
- Abstract
- The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of T-C is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field. (C) 2015 Elsevier B.V. All rights reserved.
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Related Researcher
- Jeon, Hee Chang
- College of Engineering