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Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yuldashev, Shavkat U. | - |
| dc.contributor.author | Yalishev, Vadim Sh. | - |
| dc.contributor.author | Yunusov, Ziyodbek A. | - |
| dc.contributor.author | Lee, Seung Joo | - |
| dc.contributor.author | Jeon, Hee Chang | - |
| dc.contributor.author | Kwon, Young Hae | - |
| dc.contributor.author | Lee, Geun Tak | - |
| dc.contributor.author | Park, Cheol Min | - |
| dc.contributor.author | Kang, Tae Won | - |
| dc.date.accessioned | 2024-09-26T14:01:56Z | - |
| dc.date.available | 2024-09-26T14:01:56Z | - |
| dc.date.issued | 2015-09 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.issn | 1878-1675 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/25383 | - |
| dc.description.abstract | The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of T-C is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field. (C) 2015 Elsevier B.V. All rights reserved. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.title | Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.cap.2015.04.025 | - |
| dc.identifier.scopusid | 2-s2.0-84942370973 | - |
| dc.identifier.wosid | 000362917600006 | - |
| dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.15, pp S22 - S25 | - |
| dc.citation.title | CURRENT APPLIED PHYSICS | - |
| dc.citation.volume | 15 | - |
| dc.citation.startPage | S22 | - |
| dc.citation.endPage | S25 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | SEMICONDUCTORS | - |
| dc.subject.keywordPlus | FERROMAGNETISM | - |
| dc.subject.keywordPlus | ANOMALIES | - |
| dc.subject.keywordAuthor | Diluted magnetic semiconductor | - |
| dc.subject.keywordAuthor | Ferroelectric gate | - |
| dc.subject.keywordAuthor | Magnetoelectric effect | - |
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Related Researcher
- Jeon, Hee Chang
- College of Engineering