Dependence of photocurrent on UV wavelength in ZnO/Pt bottom-contact Schottky diode
- Authors
- Lee, Byoungho; Kim, Changmin; Lee, Youngmin; Lee, Sejoon; Kim, Deuk Young
- Issue Date
- Jan-2015
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Zinc oxide; Platinum; Schottky diode; Bottom-contact; UV response
- Citation
- CURRENT APPLIED PHYSICS, v.15, no.1, pp 29 - 33
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 15
- Number
- 1
- Start Page
- 29
- End Page
- 33
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/25307
- DOI
- 10.1016/j.cap.2014.10.024
- ISSN
- 1567-1739
1878-1675
- Abstract
- We fabricated the bottom-contacted ZnO/Pt Schottky diode and investigated the dependence of its photocurrent on the wavelength of illuminated ultraviolet (UV) light source. The bottom-contacted Schottky diode was devised by growing (000l) ZnO on (111) Pt, and the fabricated device showed a strong dependence on the UV wavelength for its photo-response characteristics. When longer-wavelength-UV (e. g., UV-A) was illuminated on the device, the photo-current was increased by a factor of 200, compared to that under illumination of shorter-wavelength-UV (e. g., UV-C). The behavior is attributed to the wavelength-dependent UV penetration depth for ZnO. (C) 2014 Elsevier B.V. All rights reserved.
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- There are no files associated with this item.
- Appears in
Collections - College of Natural Science > Division of Physics & Semiconductor Science > 1. Journal Articles
- College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

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