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Dependence of photocurrent on UV wavelength in ZnO/Pt bottom-contact Schottky diode
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Byoungho | - |
| dc.contributor.author | Kim, Changmin | - |
| dc.contributor.author | Lee, Youngmin | - |
| dc.contributor.author | Lee, Sejoon | - |
| dc.contributor.author | Kim, Deuk Young | - |
| dc.date.accessioned | 2024-09-26T14:00:51Z | - |
| dc.date.available | 2024-09-26T14:00:51Z | - |
| dc.date.issued | 2015-01 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.issn | 1878-1675 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/25307 | - |
| dc.description.abstract | We fabricated the bottom-contacted ZnO/Pt Schottky diode and investigated the dependence of its photocurrent on the wavelength of illuminated ultraviolet (UV) light source. The bottom-contacted Schottky diode was devised by growing (000l) ZnO on (111) Pt, and the fabricated device showed a strong dependence on the UV wavelength for its photo-response characteristics. When longer-wavelength-UV (e. g., UV-A) was illuminated on the device, the photo-current was increased by a factor of 200, compared to that under illumination of shorter-wavelength-UV (e. g., UV-C). The behavior is attributed to the wavelength-dependent UV penetration depth for ZnO. (C) 2014 Elsevier B.V. All rights reserved. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.title | Dependence of photocurrent on UV wavelength in ZnO/Pt bottom-contact Schottky diode | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.cap.2014.10.024 | - |
| dc.identifier.scopusid | 2-s2.0-84910683626 | - |
| dc.identifier.wosid | 000345998300006 | - |
| dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.15, no.1, pp 29 - 33 | - |
| dc.citation.title | CURRENT APPLIED PHYSICS | - |
| dc.citation.volume | 15 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 29 | - |
| dc.citation.endPage | 33 | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART001959138 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | ELECTRICAL-CONDUCTION PROPERTIES | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
| dc.subject.keywordPlus | N-TYPE | - |
| dc.subject.keywordPlus | MAGNETIC-PROPERTIES | - |
| dc.subject.keywordPlus | (ZN0.93MN0.07)O | - |
| dc.subject.keywordPlus | FERROMAGNETISM | - |
| dc.subject.keywordAuthor | Zinc oxide | - |
| dc.subject.keywordAuthor | Platinum | - |
| dc.subject.keywordAuthor | Schottky diode | - |
| dc.subject.keywordAuthor | Bottom-contact | - |
| dc.subject.keywordAuthor | UV response | - |
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Related Researcher
- Lee, Young Min
- College of Advanced Convergence Engineering (Division of System Semiconductor)