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Near infrared light emitting from InN/InGaN/GaN dot-in-a-nanorod heterostructure

Authors
Lee, S.-T.Choi, H.-S.Park, B.-G.Kim, K.-J.Kim, M.-D.Kim, S.-G.Yang, W.-C.
Issue Date
2013
Publisher
IEEE Computer Society
Citation
2013 Conference on Lasers and Electro-Optics, CLEO 2013
Indexed
SCOPUS
Journal Title
2013 Conference on Lasers and Electro-Optics, CLEO 2013
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/24667
DOI
10.1364/cleo_qels.2013.jth2a.102
Abstract
We report on the light emitting of InN/InGaN/GaN dot-in-a-nanorods heterostructure grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Sharp and isolated single exciton emission line in the near infrared spectral range was observed. © 2013 The Optical Society.
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