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Near infrared light emitting from InN/InGaN/GaN dot-in-a-nanorod heterostructure
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, S.-T. | - |
| dc.contributor.author | Choi, H.-S. | - |
| dc.contributor.author | Park, B.-G. | - |
| dc.contributor.author | Kim, K.-J. | - |
| dc.contributor.author | Kim, M.-D. | - |
| dc.contributor.author | Kim, S.-G. | - |
| dc.contributor.author | Yang, W.-C. | - |
| dc.date.accessioned | 2024-09-26T11:00:57Z | - |
| dc.date.available | 2024-09-26T11:00:57Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/24667 | - |
| dc.description.abstract | We report on the light emitting of InN/InGaN/GaN dot-in-a-nanorods heterostructure grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Sharp and isolated single exciton emission line in the near infrared spectral range was observed. © 2013 The Optical Society. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IEEE Computer Society | - |
| dc.title | Near infrared light emitting from InN/InGaN/GaN dot-in-a-nanorod heterostructure | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1364/cleo_qels.2013.jth2a.102 | - |
| dc.identifier.scopusid | 2-s2.0-84903776927 | - |
| dc.identifier.bibliographicCitation | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 | - |
| dc.citation.title | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
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Related Researcher
- Yang, Woo Chul
- College of Natural Science (Department of Physics)