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Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBEopen access
- Authors
- Woo, Hyeonseok; Kim, Jongmin; Cho, Sangeun; Jo, Yongcheol; Roh, Cheong Hyun; Kim, Hyungsang; Hahn, Cheol-Koo; Im, Hyunsik
- Issue Date
- May-2017
- Publisher
- KOREAN VACUUM SOC
- Keywords
- InGaN/GaN MQW; MBE; Hetero interface; Critical thickness
- Citation
- APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, v.26, no.3, pp 52 - 54
- Pages
- 3
- Indexed
- ESCI
KCI
- Journal Title
- APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY
- Volume
- 26
- Number
- 3
- Start Page
- 52
- End Page
- 54
- ISSN
- 1225-8822
2288-6559
- Abstract
- An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.
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Related Researcher
- Cho, Sang Eun
- College of Advanced Convergence Engineering (Division of System Semiconductor)