Unraveling the Issue of Ag Migration in Printable Source/Drain Electrodes Compatible with Versatile Solution-Processed Oxide Semiconductors for Printed Thin-Film Transistor Applications

Abstract

In recent decades, solution-processable, printable oxide thin-film transistors have garnered a tremendous amount of attention given their potential for use in low-cost, large-area electronics. However, printable metallic source/drain electrodes undergo undesirable electrical/thermal migration at an interfacial stack of the oxide semiconductor and metal electrode. In this study, we report oleic acid-capped Ag nanoparticles that effectively suppress the significant Ag migration and facilitate high field-effect mobilities in oxide transistors. The origin of the role of surface-capped Ag nanoparticles is clarified with comparative studies based on X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.