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Enhanced Anti-reflective Effect of SiNx/SiOx/InSnO Multi-layers using Plasma Enhanced Chemical Vapor Deposition System with Hybrid Plasma SourceEnhanced Anti-reflective Effect of SiNx/SiOx/InSnO Multi-layers using Plasma Enhanced Chemical Vapor Deposition System with Hybrid Plasma Source
- Other Titles
- Enhanced Anti-reflective Effect of SiNx/SiOx/InSnO Multi-layers using Plasma Enhanced Chemical Vapor Deposition System with Hybrid Plasma Source
- Issue Date
- Jul-2016
- Publisher
- 한국진공학회
- Keywords
- Anti-reflective effect; Plasma enhanced chemical vapor deposition (PECVD); RF sputtering; Optical property; Physical properties
- Citation
- Applied Science and Convergence Technology, v.25, no.4, pp 73 - 76
- Pages
- 4
- Journal Title
- Applied Science and Convergence Technology
- Volume
- 25
- Number
- 4
- Start Page
- 73
- End Page
- 76
- Abstract
- Multi-layer films of SiNx/SiOx/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of SiNx/ SiOx/InSnO was investigated as a function of ratio of SiNx and SiOx thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.
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Collections - College of Natural Science > Department of Physics > 1. Journal Articles
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)