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Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy
- Authors
- Lee, D. J.; Park, C. S.; Lee, Cheol Jin; Song, J. D.; Koo, H. C.; Yoon, Chong S.; Yoon, Im Taek; Kim, H. S.; Kang, T. W.; Shon, Yoon
- Issue Date
- Apr-2014
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- p-type InP:Be/Mn/InP:Be triple layers; Increased T-c; MBE
- Citation
- CURRENT APPLIED PHYSICS, v.14, no.4, pp 558 - 562
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 14
- Number
- 4
- Start Page
- 558
- End Page
- 562
- ISSN
- 1567-1739
1878-1675
- Abstract
- The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process. (C) 2014 Elsevier B.V. All rights
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