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Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

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dc.contributor.authorLee, D. J.-
dc.contributor.authorPark, C. S.-
dc.contributor.authorLee, Cheol Jin-
dc.contributor.authorSong, J. D.-
dc.contributor.authorKoo, H. C.-
dc.contributor.authorYoon, Chong S.-
dc.contributor.authorYoon, Im Taek-
dc.contributor.authorKim, H. S.-
dc.contributor.authorKang, T. W.-
dc.contributor.authorShon, Yoon-
dc.date.accessioned2024-09-26T09:03:12Z-
dc.date.available2024-09-26T09:03:12Z-
dc.date.issued2014-04-
dc.identifier.issn1567-1739-
dc.identifier.issn1878-1675-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/23945-
dc.description.abstractThe p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process. (C) 2014 Elsevier B.V. All rights-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherELSEVIER SCIENCE BV-
dc.titleEnhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy-
dc.typeArticle-
dc.publisher.location네델란드-
dc.identifier.doi10.1016/j.cap.2014.01.017-
dc.identifier.scopusid2-s2.0-84894263046-
dc.identifier.wosid000333977100007-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.14, no.4, pp 558 - 562-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume14-
dc.citation.number4-
dc.citation.startPage558-
dc.citation.endPage562-
dc.type.docTypeArticle-
dc.identifier.kciidART001875182-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusNEUTRAL MANGANESE ACCEPTOR-
dc.subject.keywordPlusINP-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordAuthorp-type InP:Be/Mn/InP:Be triple layers-
dc.subject.keywordAuthorIncreased T-c-
dc.subject.keywordAuthorMBE-
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