Electronic structure of transparent conducting Mo-doped indium oxide films grown by polymer assisted solution process
- Authors
- Song, Aeran; Park, Hyun-Woo; Vishwanath, Sujaya Kumar; Kim, Jihoon; Baek, Ju-Yeoul; Ahn, Kyoung-Jun; Chung, Kwun-Bum
- Issue Date
- Oct-2016
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Molybdenum doped indium oxide; Electronic structure; Transparent conducting oxide; Chemical bonding states; Conduction band offset
- Citation
- CERAMICS INTERNATIONAL, v.42, no.13, pp 14754 - 14759
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 42
- Number
- 13
- Start Page
- 14754
- End Page
- 14759
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/23860
- DOI
- 10.1016/j.ceramint.2016.06.103
- ISSN
- 0272-8842
1873-3956
- Abstract
- Transparent conducting properties of molybdenum doped indium oxide thin films by polymer-assisted solution (PAS) were investigated as a function of Mo doping concentration. Indium oxide films with molybdenum of similar to 1.5% (MIO) showed lowest electrical resistivity with 7. 89x10(-4) Omega cm, compared to those of indium oxide films with 4.39x10(-3) Omega cm. The enhancement of the transparent conducting properties by molybdenum doping were explained by the electronic structure in terms of chemical bonding states, band edge states below the conduction band, and band alignment. Molybdenum doping into indium oxide films resulted in the evolution of the conduction band and the change of band alignment. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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