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Thermal Curing Property of Silicone Encapsulant Containing Quantum Dot Surrounded by Various Types of Ligandsopen access
- Issue Date
- 20-Dec-2013
- Publisher
- KOREAN CHEMICAL SOC
- Keywords
- Quantum dot; Silicone encapsulant; Ligand; Thermal curing degree; TOPO
- Citation
- BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.34, no.12, pp 3787 - 3789
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- BULLETIN OF THE KOREAN CHEMICAL SOCIETY
- Volume
- 34
- Number
- 12
- Start Page
- 3787
- End Page
- 3789
- ISSN
- 0253-2964
1229-5949
- Abstract
- In this study, the silicone thermal curing degree of the silicone-encapsulated quantum dot light emission diode was measured using the various types of chemical ligands around quantum dot. It was confirmed that the trioctyl phosphin oxide (TOPO) ligand around the quantum dot was responsible for dispersion of the quantum dot in silicone encapsulant and decline of the thermal curing degree of the silicone encapsulant. Also, it was confirmed that the thermal curing degree of silicone encapsulants containing the steric acid (SA) and the dodecanoic acid (DA) ligands were higher than the one of TOPO ligand.
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Related Researcher
- Hong, Sung Kyu
- College of Engineering (Department of Chemical and Biochemical Engineering)