SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems
- Authors
- Park, Hyogeun; Kim, Sungjun
- Issue Date
- Oct-2024
- Publisher
- Royal Society of Chemistry
- Keywords
- Associative Processing; Associative Storage; 'current; Associative Learning; Bio-inspired Computing; Cognitive Computing Systems; Hyperalgesia; Learning Behavior; Light Exposure; Long-term Potentiations; Nociceptor; Short Term Memory; Optoelectronic Devices
- Citation
- Journal of Materials Chemistry C, v.12, no.40, pp 16551 - 16559
- Pages
- 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Materials Chemistry C
- Volume
- 12
- Number
- 40
- Start Page
- 16551
- End Page
- 16559
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/23269
- DOI
- 10.1039/d4tc02992e
- ISSN
- 2050-7526
2050-7534
- Abstract
- In this study, an optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure was fabricated for bio-inspired computing. Under light exposure, the device exhibits excitatory postsynaptic current, which affords various synaptic functionalities. This device mimics the paired-pulse facilitation characteristics of short-term memory and the five essential functions of a human nociceptor: threshold, relaxation, no-adaptation, hyperalgesia, and allodynia. Additionally, it demonstrates heterosynaptic associative long-term potentiation between two inputs and emulates associative learning behavior based on Pavlov's conditioning experiment. These results demonstrate the potential of SiN-based devices as optoelectronic synapses for cognitive learning. The optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure integrated both synaptic and nociceptor functionalities, with Pavlovian conditioning examined.
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- Appears in
Collections - College of Engineering > Department of Electronics and Electrical Engineering > 1. Journal Articles

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