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SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems

Authors
Park, HyogeunKim, Sungjun
Issue Date
Oct-2024
Publisher
Royal Society of Chemistry
Keywords
Associative Processing; Associative Storage; 'current; Associative Learning; Bio-inspired Computing; Cognitive Computing Systems; Hyperalgesia; Learning Behavior; Light Exposure; Long-term Potentiations; Nociceptor; Short Term Memory; Optoelectronic Devices
Citation
Journal of Materials Chemistry C, v.12, no.40, pp 16551 - 16559
Pages
9
Indexed
SCIE
SCOPUS
Journal Title
Journal of Materials Chemistry C
Volume
12
Number
40
Start Page
16551
End Page
16559
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/23269
DOI
10.1039/d4tc02992e
ISSN
2050-7526
2050-7534
Abstract
In this study, an optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure was fabricated for bio-inspired computing. Under light exposure, the device exhibits excitatory postsynaptic current, which affords various synaptic functionalities. This device mimics the paired-pulse facilitation characteristics of short-term memory and the five essential functions of a human nociceptor: threshold, relaxation, no-adaptation, hyperalgesia, and allodynia. Additionally, it demonstrates heterosynaptic associative long-term potentiation between two inputs and emulates associative learning behavior based on Pavlov's conditioning experiment. These results demonstrate the potential of SiN-based devices as optoelectronic synapses for cognitive learning. The optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure integrated both synaptic and nociceptor functionalities, with Pavlovian conditioning examined.
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