A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technologyopen access
- Authors
- Lee, Jun-Hee; Lee, Mun-Kyo; Park, Jung-Dong
- Issue Date
- Dec-2022
- Publisher
- MDPI
- Keywords
- CMOS; low-dropout regulator; flipped voltage follower; large loop gain; fast transient; high unity-gain bandwidth
- Citation
- Sensors, v.22, no.24, pp 1 - 15
- Pages
- 15
- Indexed
- SCIE
SCOPUS
- Journal Title
- Sensors
- Volume
- 22
- Number
- 24
- Start Page
- 1
- End Page
- 15
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/21719
- DOI
- 10.3390/s22249672
- ISSN
- 1424-8220
1424-8220
- Abstract
- A direct feedback flipped voltage follower (FVF) LDO for a high-precision frequency-modulated continuous-wave (FMCW) radar is presented. To minimize the effect of the power supply ripple on the FMCW radar sensor's resolution, a folded cascode error amplifier (EA) was connected to the outer loop of the FVF to increase the open-loop gain. The direct feedback structure enhances the PSRR while minimizing the power supply ripple path and not compromising a transient response. The flipped voltage follower with a super source follower forms a fast feedback loop. The stability and parameter variation sensitivity of the multi-loop FVF LDO were analyzed through the state matrix decomposition. We implemented the FVF LDO in TSMC 65 nm CMOS technology. The fabricated FVF LDO supplied a maximum load current of 20 mA with a 1.2 V power supply. The proposed FVF LDO achieved a full-spectrum PSR with a low-frequency PSRR of 66 dB, unity-gain bandwidth of 469 MHz, and 20 ns transient settling time with a load current step from 1 mA to 20 mA.
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- Appears in
Collections - College of Engineering > Department of Electronics and Electrical Engineering > 1. Journal Articles

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