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A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technologyopen access

Authors
Lee, Jun-HeeLee, Mun-KyoPark, Jung-Dong
Issue Date
Dec-2022
Publisher
MDPI
Keywords
CMOS; low-dropout regulator; flipped voltage follower; large loop gain; fast transient; high unity-gain bandwidth
Citation
Sensors, v.22, no.24, pp 1 - 15
Pages
15
Indexed
SCIE
SCOPUS
Journal Title
Sensors
Volume
22
Number
24
Start Page
1
End Page
15
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/21719
DOI
10.3390/s22249672
ISSN
1424-8220
1424-8220
Abstract
A direct feedback flipped voltage follower (FVF) LDO for a high-precision frequency-modulated continuous-wave (FMCW) radar is presented. To minimize the effect of the power supply ripple on the FMCW radar sensor's resolution, a folded cascode error amplifier (EA) was connected to the outer loop of the FVF to increase the open-loop gain. The direct feedback structure enhances the PSRR while minimizing the power supply ripple path and not compromising a transient response. The flipped voltage follower with a super source follower forms a fast feedback loop. The stability and parameter variation sensitivity of the multi-loop FVF LDO were analyzed through the state matrix decomposition. We implemented the FVF LDO in TSMC 65 nm CMOS technology. The fabricated FVF LDO supplied a maximum load current of 20 mA with a 1.2 V power supply. The proposed FVF LDO achieved a full-spectrum PSR with a low-frequency PSRR of 66 dB, unity-gain bandwidth of 469 MHz, and 20 ns transient settling time with a load current step from 1 mA to 20 mA.
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