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Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devicesopen access
- Authors
- Jeon, Beomki; Kim, Sungjun
- Issue Date
- Jan-2023
- Publisher
- Elsevier Ltd
- Keywords
- Conductance quantization; Multilevel conductance; High-density memory; ITO electrode
- Citation
- Ceramics International, v.49, no.1, pp 425 - 430
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Ceramics International
- Volume
- 49
- Number
- 1
- Start Page
- 425
- End Page
- 430
- ISSN
- 0272-8842
1873-3956
- Abstract
- In this work, we study TiN/SiOx/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiOx film and the formation of O-2 rich ITO layers due to the oxidation reaction between ITO and SiOx. Furthermore, it was found that TiN/SiOx/ITO RRAM devices could stably endure each conductance level.
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Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)