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Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeon, Beomki | - |
| dc.contributor.author | Kim, Sungjun | - |
| dc.date.accessioned | 2024-08-08T09:31:55Z | - |
| dc.date.available | 2024-08-08T09:31:55Z | - |
| dc.date.issued | 2023-01 | - |
| dc.identifier.issn | 0272-8842 | - |
| dc.identifier.issn | 1873-3956 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/20959 | - |
| dc.description.abstract | In this work, we study TiN/SiOx/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiOx film and the formation of O-2 rich ITO layers due to the oxidation reaction between ITO and SiOx. Furthermore, it was found that TiN/SiOx/ITO RRAM devices could stably endure each conductance level. | - |
| dc.format.extent | 6 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Elsevier Ltd | - |
| dc.title | Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.ceramint.2022.09.007 | - |
| dc.identifier.scopusid | 2-s2.0-85137642018 | - |
| dc.identifier.wosid | 000931979300045 | - |
| dc.identifier.bibliographicCitation | Ceramics International, v.49, no.1, pp 425 - 430 | - |
| dc.citation.title | Ceramics International | - |
| dc.citation.volume | 49 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 425 | - |
| dc.citation.endPage | 430 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
| dc.subject.keywordPlus | MEMORY | - |
| dc.subject.keywordAuthor | Conductance quantization | - |
| dc.subject.keywordAuthor | Multilevel conductance | - |
| dc.subject.keywordAuthor | High-density memory | - |
| dc.subject.keywordAuthor | ITO electrode | - |
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Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)