Detailed Information

Cited 2 time in webofscience Cited 10 time in scopus
Metadata Downloads

Microstructure, Photoluminescence and Electrical Properties of SmxGd(1-x): SrO Hybrid Nanomaterials Synthesized via Facile Coprecipitation Methodopen access

Authors
Adimule, VinayakYallur, Basappa C.Keri, RangappaBathula, ChinnaBatakurki, Sheetal
Issue Date
May-2023
Publisher
대한금속·재료학회
Keywords
Nanostructures; Optical; Photoluminescence; Electrical properties; Samarium; Microstructure
Citation
Electronic Materials Letters, v.19, no.3, pp 278 - 297
Pages
20
Indexed
SCIE
SCOPUS
KCI
Journal Title
Electronic Materials Letters
Volume
19
Number
3
Start Page
278
End Page
297
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/20935
DOI
10.1007/s13391-022-00394-0
ISSN
1738-8090
2093-6788
Abstract
The development of triple oxide semiconductor nanostructures (NS) with special optical window is critical for the optoelectronics and the luminescent industry. The present article describes the synthesis of Sm-x:Gd(1-x)@SrO (x = 0.4, 0.6, 0.8) NS by simple Coprecipitation method. The NS were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), SEM-EDS (energy dispersive spectra), Fourier transform infrared (FT-IR), UV-visible, X-ray photoelectron spectroscopy (XPS), and Brunauer-Emmett-Teller analytical methods. The results of the powdered XRD pattern revealed the formation of mixed-phase of hexagonal crystal structure, with grain size between 62 and 78 nm. Redshift in optical absorption spectra for the Sm3+ doped Gd(1-x) SrO NS appeared when compared to Gd(1-x) SrO NS. Photoluminescence (PL) spectroscopy demonstrated broad deep defect levels in Sm-x: Gd(1-x) SrO NS when compared to Gd(1-x) SrO NS. PL studies of Gd-0.6, SrO exhibited three emission peaks detected at 373.6 nm, 382.1 nm, and 392.7 nm when excited at 325 nm. PL studies of Sm-x: Gd(1-x) SrO NS (x = 0.8) showed four emission peaks appeared at 415 nm (violet), 472 nm (blue), 532.1 nm (green) and 569.6 nm (yellow) due to f-f transition of Sm3+ in 4f(5) configuration. Higher values of dielectric constant (3.86 x 10(4)), dielectric permittivity (10(3)-10(5)) resulted for the Sm-x:Gd(1-x)@SrO (x = 0.8) NS with negligibly small dielectric loss (< 0.03) when compared to Gd-0.6 SrO NS. The synthesised materials demonstrated excellent luminescence properties with good dielectric properties therefore these materials could be good candidates to be used as high-luminescent devices. (GRAPHICS)
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Department of Electronics and Electrical Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Devasahayam, Bathula Chinna photo

Devasahayam, Bathula Chinna
College of Engineering (Department of Electronics and Electrical Engineering)
Read more

Altmetrics

Total Views & Downloads

BROWSE