Microstructure, Photoluminescence and Electrical Properties of SmxGd(1-x): SrO Hybrid Nanomaterials Synthesized via Facile Coprecipitation Methodopen access
- Authors
- Adimule, Vinayak; Yallur, Basappa C.; Keri, Rangappa; Bathula, Chinna; Batakurki, Sheetal
- Issue Date
- May-2023
- Publisher
- 대한금속·재료학회
- Keywords
- Nanostructures; Optical; Photoluminescence; Electrical properties; Samarium; Microstructure
- Citation
- Electronic Materials Letters, v.19, no.3, pp 278 - 297
- Pages
- 20
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Electronic Materials Letters
- Volume
- 19
- Number
- 3
- Start Page
- 278
- End Page
- 297
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/20935
- DOI
- 10.1007/s13391-022-00394-0
- ISSN
- 1738-8090
2093-6788
- Abstract
- The development of triple oxide semiconductor nanostructures (NS) with special optical window is critical for the optoelectronics and the luminescent industry. The present article describes the synthesis of Sm-x:Gd(1-x)@SrO (x = 0.4, 0.6, 0.8) NS by simple Coprecipitation method. The NS were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), SEM-EDS (energy dispersive spectra), Fourier transform infrared (FT-IR), UV-visible, X-ray photoelectron spectroscopy (XPS), and Brunauer-Emmett-Teller analytical methods. The results of the powdered XRD pattern revealed the formation of mixed-phase of hexagonal crystal structure, with grain size between 62 and 78 nm. Redshift in optical absorption spectra for the Sm3+ doped Gd(1-x) SrO NS appeared when compared to Gd(1-x) SrO NS. Photoluminescence (PL) spectroscopy demonstrated broad deep defect levels in Sm-x: Gd(1-x) SrO NS when compared to Gd(1-x) SrO NS. PL studies of Gd-0.6, SrO exhibited three emission peaks detected at 373.6 nm, 382.1 nm, and 392.7 nm when excited at 325 nm. PL studies of Sm-x: Gd(1-x) SrO NS (x = 0.8) showed four emission peaks appeared at 415 nm (violet), 472 nm (blue), 532.1 nm (green) and 569.6 nm (yellow) due to f-f transition of Sm3+ in 4f(5) configuration. Higher values of dielectric constant (3.86 x 10(4)), dielectric permittivity (10(3)-10(5)) resulted for the Sm-x:Gd(1-x)@SrO (x = 0.8) NS with negligibly small dielectric loss (< 0.03) when compared to Gd-0.6 SrO NS. The synthesised materials demonstrated excellent luminescence properties with good dielectric properties therefore these materials could be good candidates to be used as high-luminescent devices. (GRAPHICS)
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