Detailed Information
Cited 22 time in 
Cited 26 time in 
Cited 26 time in
Metadata Downloads
Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs
- Authors
- Dogar, Salahuddin; Khan, Waciar; Kim, Sam-Dong
- Issue Date
- 15-Mar-2016
- Publisher
- ELSEVIER SCI LTD
- Keywords
- UV detector; ZnO nanorods; AlGaN/GaN HEMT; High responsivity; Gate length effect; Response speed
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.44, pp 71 - 77
- Pages
- 7
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 44
- Start Page
- 71
- End Page
- 77
- ISSN
- 1369-8001
1873-4081
- Abstract
- We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AIGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (similar to 10 and similar to 190 ms) and responsivity (similar to 1.1 x 10(5) A/W) were observed from detectors of the shortest gate length of 2 mu m among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date. (C) 2016 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.