Facile Route to NiO Nanostructured Electrode Grown by Oblique Angle Deposition Technique for Supercapacitors
- Authors
- Kannan, Vasudevan; Inamdar, Akbar I.; Pawar, Sambaji M.; Kim, Hyun-Seok; Park, Hyun-Chang; Kim, Hyungsang; Im, Hyunsik; Chae, Yeon Sik
- Issue Date
- 13-Jul-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- electrochemical supercapacitor; NiO; oblique angle deposition; nanostructures; e-beam evaporation
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.8, no.27, pp 17220 - 17225
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 8
- Number
- 27
- Start Page
- 17220
- End Page
- 17225
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/18051
- DOI
- 10.1021/acsami.6b03714
- ISSN
- 1944-8244
1944-8252
- Abstract
- We report an efficient method for growing NiO nanostructures by oblique angle deposition (OAD) technique in an e-beam evaporator for supercapacitor applications. This facile physical vapor deposition technique combined with OAD presents a unique, direct, and economical route for obtaining high width-to-height ratio nanorods for super capacitor electrodes. The NiO nanostructure essentially consists of nanorods with varying dimensions. The sample deposited at OAD 75 degrees showed highest supercapacitance value of 344 F/g. NiO nanorod electrodes exhibits excellent electrochemical stability with no degradation in capacitance after 5000 charge discharge cycles. The nanostructured film adhered well to the substrate and had 131% capacity retention. Peak energy density and power density of the NiO nanorods were 8.78 Wh/kg and 2.5 kW/kg, respectively. This technique has potential to be expanded for growing nanostructured films of other interesting metal/metal oxide candidates for supercapacitor applications.
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- Appears in
Collections - College of Engineering > Department of Electronics and Electrical Engineering > 1. Journal Articles
- College of Natural Science > Department of Physics > 1. Journal Articles
- College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

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