Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Device characteristics and defect ananlysis of InZnSnO thin film transistor as a function of annealing ambient
- Authors
- 정권범
- Issue Date
- 19-Jul-2022
- Place
- 대한민국
- Conference Name
- ISPSA
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Science > Department of Physics > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)