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Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effectopen access

Yun, Seokyeon; Mahata, Chandreswar; Kim, Min-Hwi; Kim, Sungjun

ArticleIssue Date2022CitationApplied Surface Science, v.579, pp 1 - 6PublisherElsevier BV
SCIESCOPUS
Coexistence of non-volatile and volatile characteristics of the Pt/TaOx/TiN deviceopen access

Yun, Seokyeon; Park, Jongmin; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2022CitationResults in Physics, v.34, pp 1 - 6PublisherElsevier BV
SCIESCOPUS
Ferroelectric synaptic devices based on CMOS-compatible HfAlOx for neuromorphic and reservoir computing applicationsopen access

Kim, Dahye; Kim, Jihyung; Yun, Seokyeon; Lee, Jungwoo; Seo, Euncho; Kim, Sungjun

ArticleIssue Date2023CitationNanoscale, v.15, no.18, pp 8366 - 8376PublisherRoyal Society of Chemistry
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