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SCIESCOPUS
Atomic Layer Deposited SiOx-Based Resistive Switching Memory for Multi-Level Cell Storageopen access

Lee, Yewon; Shin, Jiwoong; Nam, Giyeong; Chung, Daewon; Kim, Sungjoon; Jeon, Joonhyeon; Kim, Sungjun

ArticleIssue Date2022CitationMetals, v.12, no.8, pp 1 - 6PublisherMDPI
SCIESCOPUS
Energy efficient short-term memory characteristics in Ag/SnOx/TiN RRAM for neuromorphic systemopen access

Kwon, Osung; Shin, Jiwoong; Chung, Daewon; Kim, Sungjun

ArticleIssue Date2022CitationCeramics International, v.48, no.20, pp 30482 - 30489PublisherELSEVIER
SCIESCOPUS
Gradual conductance modulation of Ti/WOx/Pt memristor with self-rectification for a neuromorphic system

Shin, Jiwoong; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2021CitationAPPLIED PHYSICS LETTERS, v.119, no.1PublisherAIP Publishing
SCIESCOPUS
Implementation of reservoir computing using volatile WOx-based memristoropen access

Kim, Dahye; Shin, Jiwoong; Kim, Sungjun

ArticleIssue Date2022CitationApplied Surface Science, v.599, pp 1 - 8PublisherELSEVIER
SCIESCOPUS
Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrateopen access

Kim, Dahye; Shin, Jiwoong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.10PublisherMDPI
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