Structural, optical and electrical properties of Ni doped ZnO nanostructures synthesized by solution combustion method
- Authors
- Singh, Harpreetpal; Kumar, Vijay; Jeon, H. C.; Kang, T. W.; Kumar, Sunil
- Issue Date
- Jan-2018
- Publisher
- SPRINGER
- Citation
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.29, no.2, pp 1327 - 1332
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Volume
- 29
- Number
- 2
- Start Page
- 1327
- End Page
- 1332
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/9843
- DOI
- 10.1007/s10854-017-8038-4
- ISSN
- 0957-4522
1573-482X
- Abstract
- In this work, pure and Ni-doped ZnO nanostructures (NSs) with different concentrations of Ni (2, 4, 6%) were successfully prepared via solution combustion method. The TEM photograph shows the formation of flake-like structures with the decrease in size of NSs as the dopant concentration is increased. XRD investigation shows the hexagonal wurtzite structure of doped and undoped ZnO nanostructures with a NiO peak (200) as secondary phase for 4 and 6% dopant concentration level. Broadening of spectra of ZnO around 480 cm(-1) in FTIR spectra is observed with the increase of dopant concentration. UV-Visible spectra show the increase in absorbance when the dopant level (Ni2+) is increase from 2 to 4% in ZnO and decrease in absorbance with further increase in dopant level to 6%. An increase in energy band gap is observed in Ni (6%)-doped ZnO due to due to the sp-d interactions taking place between the band electrons and the localised d electrons of Ni2+ ions (Burstein-Moss effect). I-V characteristics reveal the increase in current with the increase in dopant level from 2 to 4% and decrease in current when the dopant level is further increased to 6% which is in agreement with the Burstein-Moss effect.
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