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Structural, optical and electrical properties of Ni doped ZnO nanostructures synthesized by solution combustion method

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dc.contributor.authorSingh, Harpreetpal-
dc.contributor.authorKumar, Vijay-
dc.contributor.authorJeon, H. C.-
dc.contributor.authorKang, T. W.-
dc.contributor.authorKumar, Sunil-
dc.date.accessioned2023-04-28T09:42:34Z-
dc.date.available2023-04-28T09:42:34Z-
dc.date.issued2018-01-
dc.identifier.issn0957-4522-
dc.identifier.issn1573-482X-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/9843-
dc.description.abstractIn this work, pure and Ni-doped ZnO nanostructures (NSs) with different concentrations of Ni (2, 4, 6%) were successfully prepared via solution combustion method. The TEM photograph shows the formation of flake-like structures with the decrease in size of NSs as the dopant concentration is increased. XRD investigation shows the hexagonal wurtzite structure of doped and undoped ZnO nanostructures with a NiO peak (200) as secondary phase for 4 and 6% dopant concentration level. Broadening of spectra of ZnO around 480 cm(-1) in FTIR spectra is observed with the increase of dopant concentration. UV-Visible spectra show the increase in absorbance when the dopant level (Ni2+) is increase from 2 to 4% in ZnO and decrease in absorbance with further increase in dopant level to 6%. An increase in energy band gap is observed in Ni (6%)-doped ZnO due to due to the sp-d interactions taking place between the band electrons and the localised d electrons of Ni2+ ions (Burstein-Moss effect). I-V characteristics reveal the increase in current with the increase in dopant level from 2 to 4% and decrease in current when the dopant level is further increased to 6% which is in agreement with the Burstein-Moss effect.-
dc.format.extent6-
dc.language영어-
dc.language.isoENG-
dc.publisherSPRINGER-
dc.titleStructural, optical and electrical properties of Ni doped ZnO nanostructures synthesized by solution combustion method-
dc.typeArticle-
dc.publisher.location네델란드-
dc.identifier.doi10.1007/s10854-017-8038-4-
dc.identifier.scopusid2-s2.0-85031946883-
dc.identifier.wosid000422863600056-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.29, no.2, pp 1327 - 1332-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS-
dc.citation.volume29-
dc.citation.number2-
dc.citation.startPage1327-
dc.citation.endPage1332-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusMAGNETIC-PROPERTIES-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusII-VI-
dc.subject.keywordPlusMN-
dc.subject.keywordPlusCOPRECIPITATION-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusNANOPARTICLES-
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