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Effect of Isovalent Doping on the Magnetic Properties of ZnMnO Diluted Magnetic Semiconductors

Authors
Yunusov, Ziyodbek A.Yuldashev, Shavkat U.Kang, Tae WonLee, Seung JooKwon, Young HaeJeon, Hee Chang
Issue Date
Jan-2019
Publisher
KOREAN PHYSICAL SOC
Keywords
Diluted magnetic semiconductors; ZnMnO; Isovalent doping
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.74, no.2, pp 168 - 172
Pages
5
Indexed
SCI
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
74
Number
2
Start Page
168
End Page
172
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/8520
DOI
10.3938/jkps.74.168
ISSN
0374-4884
1976-8524
Abstract
The magnetic properties of a ZnMnO diluted magnetic semiconductor isovalently doped with Mg and S have been successfully studied. ZnMnO alloys were prepared with different concentrations of magnesium and sulfur by using ultrasonic spray pyrolysis technique; additionally, the films were doped for free charge carriers by using nitrogen. For ZnMnO doped with 5% of Mg, the Curie temperature reached 104 K, and second-phase magnetic precipitates were observed with increasing Mg concentration. On the other hand, the sulfur doped ZnMnO showed an increased Curie temperature higher than room temperature due to increased number of holes which mediated the magnetic exchange interaction between magnetic ions.
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