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Effect of Cu-doping on the photoluminescence and photoconductivity of template synthesized CdS nanowires

Authors
Kumar, VijayKumar, KapilJeon, H. C.Kang, T. W.Lee, DongjinKumar, Sunil
Issue Date
Jan-2019
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
Cu-doped CdS nanowires; Bandgap; Emission wavelength; Excited state lifetime; Photoconductivity
Citation
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.124, pp 1 - 6
Pages
6
Indexed
SCI
SCIE
SCOPUS
Journal Title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume
124
Start Page
1
End Page
6
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/8510
DOI
10.1016/j.jpcs.2018.08.031
ISSN
0022-3697
1879-2553
Abstract
Cu-doped CdS nanowires were synthesized within the pores of anodic alumina membrane as template via electrochemical deposition. Morphological, structural, optical and photoconductive properties of the synthesized nanowires were studied. Morphological and structural properties were studied by using SEM with EDS (point & line mapper mode) and X-Ray Diffractometer. Scanning electron microscopy with point EDS and line EDS mapping confirms the deposition of pure CdS and Cu-doped CdS throughout the template length respectively. XRD investigations shows the presence of polycrystalline phase and cubic structure of pristine CdS nanowires. Optical properties were studied by UV-visible absorption spectroscopy and time resolved photoluminescence. A gradual decrease in energy band gap from 2.38 eV to 2.10 eV is observed for Cu doped CdS nanowires. Time resolved photoluminescence studies shows the red shift in emission wavelength and increase of excited state lifetimes with Cu doping and also with increase in its concentration in CdS nanowires. Current-voltage characteristics of pure and doped CdS nanowires studied at varying incident light intensity show that the Cu doped nanowires show negative photoconductivity.
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