Hole-induced polymerized interfacial film of polythiophene as cosensitizer and back-electron injection barrier layer in dye-sensitized TiO2 nanotube array
- Authors
- Shrestha, Nabeen K.; Yoon, Seog Joon; Bathula, Chinna; Opoku, Henry; Noh, Yong-Young
- Issue Date
- 15-Apr-2019
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Hole-induced polymerization; Polythiophene co-sensitizer; Interfacial treatment; Back-electron injection barrier; TiO2 nanotubes; DSSC
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.781, pp 589 - 594
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 781
- Start Page
- 589
- End Page
- 594
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/8190
- DOI
- 10.1016/j.jallcom.2018.12.048
- ISSN
- 0925-8388
1873-4669
- Abstract
- In this work, we demonstrate that an ultra-thin film of polythiophene deposited interfacially via hole-induced polymerization on the surface of dye-sensitized TiO2 nanotube array acts as co-sensitizer, and hinders back-electron transfer in a DSSC. Consequently, the dark current, and the recombination reactions can be suppressed, leading to an improved number of electron density at the TiO2 array electrode. Thus, an enhanced photocurrent, and power conversion efficiency of the device is achieved. This logical concept is experimentally justified, and the device, after polythiophene interfacial treatment, demonstrates an enhanced power conversion efficiency by the factor of 39.19%. (C) 2018 Elsevier B.V. All rights reserved.
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- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Electronics and Electrical Engineering > 1. Journal Articles
- College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

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