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Cited 11 time in webofscience Cited 13 time in scopus
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Investigation on nebulizer spray coated Nd-doped SnS2 thin films for solar cell window layer application

Authors
Arulanantham, A. M. S.Valanarasu, S.Rosario, S. RexKathalingam, A.Shkir, MohdGanesh, VYahia, I. S.
Issue Date
Aug-2019
Publisher
SPRINGER
Citation
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.30, no.15, pp 13964 - 13973
Pages
10
Indexed
SCI
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume
30
Number
15
Start Page
13964
End Page
13973
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/7858
DOI
10.1007/s10854-019-01743-w
ISSN
0957-4522
1573-482X
Abstract
Economic nebulizer spray pyrolysis (NSP) technique has been employed to deposit Neodymium (Nd) doped Tin disulfide (SnS2) thin films at 325 degrees C by varying the doping concentration of Nd (0%, 2%, 4% and 6%). The impact of Nd concentration on crystalline structure, morphology and opto-electronic properties of films were studied using X-ray diffraction (XRD), FT-Raman spectrophotometer, atomic force microscope (AFM), energy-dispersive X-ray spectroscope, scanning electron microscope (SEM), UV-Visible spectrometer and Hall Effect measurements. Structural parameters such as lattice constants, texture orientation factor, micro strain, dislocation density and crystallite size were estimated using XRD data. The SEM and AFM images of films displayed an exceptional morphology. The surface roughness of the films was found to increase with the increase of dopant concentration. Optical analysis done on the films revealed variation in band gap from 2.75 to 2.92 eV as the Nd doping concentration is increased from 2 to 6%. SnS2 thin film exhibited n-type conductivity as, confirmed from Hall Effect studies. The resistivity and concentration of the carrier in the film were found to be 4.17 x 10(-2) omega cm and 4.06 x 10(17) cm(-3) respectively which were then correlated to the deposition parameters. Furthermore, FTO/n-Nd-SnS2/p-SnS hetero-junction based solar cells were prepared and their current voltage curve in dark condition was obtained.
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