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Toward More Realistic Synaptic Mimicry in Non-Volatile RRAM Devices: A Novel Experimental Approach Focused on Synaptic Forgetting

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dc.contributor.authorKo, Minsu-
dc.contributor.authorByun, Yongjin-
dc.contributor.authorKim, Sungjun-
dc.date.accessioned2025-12-10T03:00:59Z-
dc.date.available2025-12-10T03:00:59Z-
dc.date.issued2026-03-
dc.identifier.issn2365-709X-
dc.identifier.issn2365-709X-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/62266-
dc.description.abstractSynaptic emulation using memristive devices has advanced neuromorphic computing by enabling energy-efficient and scalable architectures. Here, we report a non-volatile TiN/Al/TiN/Ti/TiOx/Al2O3/Pt resistive random-access memory (RRAM) device featuring an oxygen-deficient TiOx switching layer. The device exhibits reliable long-term memory characteristics with stable multi-level current modulation. Neuromorphic functionalities such as pattern learning and classification using the EMNIST dataset, as well as 4-bit edge computing, are successfully demonstrated, with the classification achieving an accuracy of 91.18%. While prior studies predominantly focused on excitatory synaptic behaviors, this work introduces a hardware-level approach to emulate synaptic forgetting, an essential but underexplored aspect of biological memory processing. To implement forgetting, we propose three experimental methodologies: (1) inhibitory postsynaptic current (IPSC) for synaptic suppression, (2) reversed Pavlovian conditioning to emulate de-learning, and (3) activity-dependent synaptic selection (ADSS) mimicking biologically realistic synaptic pruning. These strategies enable selective synaptic weakening based on firing strength and frequency, closely resembling natural forgetting mechanisms. Our findings establish a new paradigm in neuromorphic hardware that balances learning and forgetting using non-volatile devices. This direction not only enhances biological plausibility but also broadens the functional capabilities of memristive systems for adaptive and efficient edge AI applications.-
dc.language영어-
dc.language.isoENG-
dc.publisherWiley-VCH GmbH-
dc.titleToward More Realistic Synaptic Mimicry in Non-Volatile RRAM Devices: A Novel Experimental Approach Focused on Synaptic Forgetting-
dc.typeArticle-
dc.publisher.location독일-
dc.identifier.doi10.1002/admt.202501570-
dc.identifier.scopusid2-s2.0-105023398480-
dc.identifier.wosid001622092100001-
dc.identifier.bibliographicCitationAdvanced Materials Technologies, v.11, no.5-
dc.citation.titleAdvanced Materials Technologies-
dc.citation.volume11-
dc.citation.number5-
dc.type.docTypeArticle-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthoractivity-dependent synaptic selection-
dc.subject.keywordAuthorinhibitory postsynaptic current-
dc.subject.keywordAuthornon-volatile memristor-
dc.subject.keywordAuthorresistive random-access memory-
dc.subject.keywordAuthorsynaptic forgetting-
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