Computation-assisted design of stable quasi-2D organic sulfate perovskite NIR light-emitting diodesopen access
- Authors
- Jana, Atanu; Sree, Vijaya Gopalan; Ba, Qiankai; Lee, Chi Ho; Das, Deblina; Meena, Abhishek; Mal, Sourav; Lee, Sang Uck; Cho, Sangeun
- Issue Date
- Nov-2025
- Publisher
- Elsevier Inc.
- Keywords
- defect passivation; density functional theory; ion migration; organic-inorganic hybrid perovskite; quasi-2D red light-emitting perovskite; red light-emitting diodes; solid-state synthesis; sulfate ion passivation
- Citation
- Cell Reports Physical Science, v.6, no.11
- Indexed
- SCIE
SCOPUS
- Journal Title
- Cell Reports Physical Science
- Volume
- 6
- Number
- 11
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/62231
- DOI
- 10.1016/j.xcrp.2025.102907
- ISSN
- 2666-3864
2666-3864
- Abstract
- Quasi-two-dimensional (2D) perovskite light-emitting diodes (PeLEDs) exhibit high red-emission efficiency but poor stability due to defect-mediated recombination and ion migration in hybrid perovskite nanocrystals (NCs). Here, we present a solvent-free mechanochemical synthesis of red-emitting quasi-2D (OA)<inf>2</inf>(MA)<inf>2</inf>Pb<inf>2</inf>I<inf>8</inf>(PbSO<inf>4</inf>) NCs using dioctylammonium sulfate (DOS), guided by first-principles calculations. The DOS ligand promotes PbSO<inf>4</inf> layer formation, which passivates defects, suppresses ion migration, and enhances humidity resistance. Unlike iodide-based octylammonium iodide (OAI) devices that degrade rapidly and emit only at 763 nm, DOS-stabilized PeLEDs show dual emission at 651 and 763 nm, indicating improved phase stability. The devices achieve a peak luminance of 7,039 cd/cm2 and an external quantum efficiency of 9.76%, retaining over 60% of initial EQE after 100 days, markedly outperforming conventional OAI-MAPbI<inf>3</inf> PeLEDs (<20%). These results demonstrate that sulfate passivation provides a simple and scalable route to robust, durable red-emitting quasi-2D PeLEDs, offering a promising strategy for high-performance optoelectronic devices. © 2025 The Author(s).
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Collections - College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

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