산화막 기둥을 포함한 수직방향 트랜지스터 기반 2T DRAM 셀

김수연; 공성환; 심원보

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산화막 기둥을 포함한 수직방향 트랜지스터 기반 2T DRAM 셀2T DRAM cell with vertical transistor having oxide pillar

Alternative Title: 2T DRAM cell with vertical transistor having oxide pillar

Authors: 김수연; 공성환; 심원보

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/62200

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Appears in Collections: College of Advanced Convergence Engineering > Division of System Semiconductor > 4. Patents

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