Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
강유전성 터널 접합의 바이모달 작동
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김성준 | - |
| dc.contributor.author | 박용진 | - |
| dc.contributor.author | 이정규 | - |
| dc.date.accessioned | 2025-09-09T10:03:47Z | - |
| dc.date.available | 2025-09-09T10:03:47Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/61479 | - |
| dc.title | 강유전성 터널 접합의 바이모달 작동 | - |
| dc.title.alternative | Bimodal operation of multifunctional HfOx-based memristor: from ferroelectric tunnel junction to resistive random access memories | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2024-02-19 | - |
| dc.date.registration | 2025-07-14 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | 10-2835210 | - |
| dc.identifier.patentApplicationNumber | 10-2024-0023476 | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)