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RS-CIM: Area-efficient Compute-in-Memory with R-DAC & SAR Hybrid ADCopen access

Authors
Lee, Kyu HyunSong, MinkyuKim, Soo Youn
Issue Date
2025
Publisher
IEEE
Keywords
7T SRAM-based Digital-to-Time Converter(7TC); 8T compact SRAM; Analog Computing; Compute-in-Memory; R-DAC&SAR hybrid ADC(RS-ADC)
Citation
2025 IEEE International Symposium on Circuits and Systems (ISCAS)
Indexed
SCOPUS
Journal Title
2025 IEEE International Symposium on Circuits and Systems (ISCAS)
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/58911
DOI
10.1109/ISCAS56072.2025.11043303
ISSN
0271-4302
2158-1525
Abstract
Analog computing offers higher energy efficiency compared to digital, making it suitable for low-power applications. However, the area overhead of digital-to-analog converter (DAC) and analog-to-digital converter (ADC) reduces area efficiency, either by requiring an analog MUX or by lowering cell array density. To solve this problem, we propose a high-area efficiency analog compute-in-memory structure consisting of a 7T SRAM-based digital-to-time converter with clock multiplication and a hybrid ADC structure of a resistor-DAC and SAR ADC. Compared to conventional SAR ADCs and flash ADCs, the number of capacitors and comparators was reduced by 87.5% and 93.3%, respectively. As a result, we achieved 247.7 TOPS/W and 6.498 TOPS/mm2 when scaling down to 28 nm process. © 2025 IEEE.
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